Amorphous Refractory Start Decomposing
Amorphous Refractory Silicon carbide is a synthetic material, its chemical measurement of molecular Weight: Si 50%, C 50%, to the quality of: Si 70.04%, c 29.96%, relative molecular weight of 40.09.
Si-C Two-element system phase diagram, Amorphous Refractory Silicon carbide has no uniform melting point. In the closed system, under the condition of total pressure of 101kPa, silicon carbide is decomposed into graphite and silicon-rich melt in 2,735 Shan. This temperature is also the highest temperature to form silicon carbide crystals. In open systems, silicon carbide begins to decompose around 2,300 Shan, Amorphous Refractory forming gaseous silicon and remaining graphite
Silicon carbide has two crystal shapes: Shang silicon carbide is similar to sphalerite structure of the equiaxed crystal system, Zhang silicon carbide is the crystal arrangement of dense six-square crystal system. Shang silicon carbide is converted to silicon carbide at about 2,100 Shan.
Requirements of the recycled material: including amorphous material, two grade material, should meet the following requirements: Sic, Si02, fixed carbon $number, Amorphous Refractory impurities, 4.3%.
The requirements of baking material: the raw material layer must be fitted with a certain amount of coke, sawdust and salt to make the baking material. Add human capacity (to 100t) Coke Ke 50k, sawdust 30, salt $number.
Insulation Material Requirements: The new furnace needs to be equipped with insulation material. The ratio of coke to quartz is 0.6. If the use of waste material instead of the following requirements: Sic, Si02, C20, the other 3.5%.
The stove length is 7 17m, the width is 1. Amorphous Refractory Inter 4m, height 1.7. The rectangular electrode block is fixed on the two-end wall and extends into the stove. In order to prevent the oxidation of the electrode, coating on the electrode block.
The furnace core is composed of Coke block, the granularity is 50 100mm, is used to electrify. The furnace power is generally 750, and the energy consumption per 1kgSiC is 7 9k. h, the heating time of the production cycle is 26, cooling 24h.
The mixing material is used to control water $number, and the bulk weight of mixture is 1.4 4.6g CM3. The loading order is to spread a layer of raw material at the bottom of the furnace, then add new ingredients to a certain height (about One-second of the furnace core to the bottom of the furnace), Amorphous Refractory lay a layer of amorphous material on top of it, and then continue to add ingredients to the core level.
The furnace core is placed on a chassis made of ingredients and slightly raised in the middle to accommodate the collapse that occurs during the furnace service. The upper part of the furnace is mixed with the ingredients, also put amorphous materials or production of raw materials, Amorphous Refractory the furnace installed after the formation of the middle high, both sides low (flat with the furnace wall).
After the stove is installed, it can be energized to synthesize and control the reaction process with the current voltage intensity. When the furnace temperature rose to 1500 Shan, began to generate Seich, starting from 2,100 Shan into Sian Sic, 2,400 Shan all into Sian Sic. Synthetic time for 26, cooling 24h can be watered after cooling, after the graduation, grading sorting. After crushing, Amorphous Refractory acid pickling is used to remove impurities such as iron, aluminum, calcium, and magnesium in synthetic materials.
High purity metal silicon powder and high purity toner (graphite powder) are used to heat and synthesize in vacuum or protective atmosphere. In the 1150 element Si (SI) and the carbon (c) reaction to produce Seich, with amorphous structure, to 1350 Shan began to have Seich crystallization. Amorphous Refractory Seich crystals are produced in 2000 Shan. Higher than 2000 Shan can generate Sian Sic.
Silicon carbide produced in this way, although high in cost, can produce high purity sic material.
With four chlorinated silicon (SiCl4) and carbon hydride (toluene) reaction, the 1200 1800 is the most suitable temperature for producing sic. Amorphous Refractory Using chemical metrology than SI: c = 1:1 of silicone organic compounds, methyl silane pyrolysis can be made of SIC. The 1400 produces colorless sic crystals.
The high purity semiconductor and single crystal Sic can be produced in this way, and the dense protective layer can be made on refractory metals or other compounds and graphite products. Amorphous Refractory Sic high strength whiskers and fibers can also be made.